Formation of defect-pairs in GaN under high-energy particle irradiation. Courtesy: S Chen Gallium nitride (GaN) is the world’s second-favourite semiconductor, present in devices ranging from ...

This review paper published in AI & Materials explores the implementation of first-principles calculation method within high-entropy carbides ceramics (HECCs) research, specifically examining its role ...

Combining LaMET with phenomenological modeling using global constraints from SDE can offer accurate state-of-the-art lattice quantum chromodynamics of PDFs, offering a new approach for first-principle ...