IEEE

An RC-Biased ESD Protection Clamp for GaN HEMT

Abstract: In this article, a novel electrostatic discharge (ESD) circuit for GaN HEMT is proposed and demonstrated. The proposed ESD clamp consists of a p-GaN HEMT, current-limiting resistors, and a ...
IEEE

Design of Low-Leakage ESD Power Clamp Circuit with Multi-Level Control Network

Abstract: This paper proposes a low-leakage ESD clamp circuit design utilizing a silicon-controlled rectifier (SCR) as the clamping device for nanoscale process applications. The SCR triggering ...