Abstract: This study introduces a breakthrough achievement of 0.1-Gb/mm2 wing-shaped high-density embedded 3-D via resistive random access memory (Via RRAM) in TSMC’s 16-nm FinFET CMOS logic process.

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As a blogger turned journalist, I love tapping into curiosity that drives us to curate spaces that truly embody our vision. I test products for a living, which puts me at the forefront of trendy and ...