Researchers at Fudan University develop a picosecond-level flash memory device in their lab. GAO ERQIANG/CHINA DAILY Researchers from Fudan University in Shanghai have developed a picosecond-level ...

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Abstract: Ferroelectric-field-effect transistors (FeFETs) are promising for future nonvolatile-memory and computation-in-memory applications. This brief presents a new approach for logic-in-memory by ...

Abstract: The rapid advancement of deep learning (DL) models has led to a pressing need for efficient on-device DL solutions, particularly for edge devices with limited resources. processing-in-memory ...

The last decade-plus has seen a wealth of advancements designed to secure data at the microprocessor level, but a team of academic researchers recently punched through those defenses with a tiny ...

A new study reveals that insulating buffer layers are no longer needed for ultrathin magnetic racetrack devices, unlocking new paths for seamless integration with functional substrates. Modern ...

Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), MCTI, Campinas, São Paulo 13083-200, Brazil ...